ECH8649
mm
Outline Drawing
ECH8649-TL-H
Mass (g) Unit
0.02
* For reference
Land Pattern Example
0.65
0.4
Unit: mm
No. A0854-6/7
相关PDF资料
ECH8651R-TL-HX MOSFET N-CH DUAL 24V 10A ECH8
ECH8651R-TL-H MOSFET N-CH DUAL 24V 10A ECH8
ECH8652-TL-H MOSFET P-CH 12V 6A ECH8
ECH8653-TL-H MOSFET N-CH DUAL 20V 7.5A ECH8
ECH8655R-TL-H MOSFET N-CH DUAL 24V 9A ECH8
ECH8656-TL-H MOSFET N-CH 20V 7.5A ECH8
ECH8657-TL-H MOSFET N-CH DUAL 35V 4.5A ECH8
ECH8659-TL-H MOSFET N-CH DUAL 30V 7A ECH8
相关代理商/技术参数
ECH8651R 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ECH8651R_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8651R-R-TL-H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8651R-R-TL-HX 制造商:ON Semiconductor 功能描述:MOSFET
ECH8651R-TL-H 功能描述:MOSFET NCH+NCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8651R-TL-HX 功能描述:MOSFET NCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8652 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
ECH8652_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications